IXFT58N20Q
- Description：
- MOSFET N-CH 200V 58A TO-268
- Manufacturer：
- IXYS
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- HiPerFET™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 58A (Tc)
- Rds On (Max) @ Id, Vgs
- 40 mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 4mA
- Gate Charge (Qg) @ Vgs
- 140nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 3600pF @ 25V
- Power - Max
- 300W
- Mounting Type
- Surface Mount
- Package / Case
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package
- TO-268
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