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SI4447DY-T1-GE3

Description:
MOSFET P-CH D-S 40V 8-SOIC
Manufacturer:
Vishay Siliconix
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SI4447DY-T1-GE3

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta)
Rds On (Max) @ Id, Vgs
72 mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) @ Vgs
14nC @ 4.5V
Input Capacitance (Ciss) @ Vds
805pF @ 20V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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