EPC8009TENGR
- Description：
- TRANS GAN 65V 4.1A BUMPED DIE
- Manufacturer：
- EPC
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Product Information
- Category
- FETs - Single
- Packaging
- Tray
- Series
- eGaN®
- FET Type
- GaNFET N-Channel, Gallium Nitride
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 65V
- Current - Continuous Drain (Id) @ 25°C
- 4.1A (Tc)
- Rds On (Max) @ Id, Vgs
- 138 mOhm @ 500mA, 5V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 0.380nC @ 32.5V
- Input Capacitance (Ciss) @ Vds
- 47pF @ 32.5V
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Supplier Device Package
- Die
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