TK14E65W,S1X
- Description：
- MOSFET N-CH 650V 13.7A TO-220
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 13.7A (Ta)
- Rds On (Max) @ Id, Vgs
- 250 mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 690µA
- Gate Charge (Qg) @ Vgs
- 35nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 1300pF @ 300V
- Power - Max
- 130W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220-3
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