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TK6Q60W,S1VQ

Description:
MOSFET N CH 600V 6.2A IPAK
Manufacturer:
Toshiba Semiconductor and Storage
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TK6Q60W,S1VQ

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
6.2A (Ta)
Rds On (Max) @ Id, Vgs
820 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
3.7V @ 310µA
Gate Charge (Qg) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) @ Vds
390pF @ 300V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-251-3 Stub Leads, IPak
Supplier Device Package
I-Pak

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