2SK1930(TE24L,Q)
- Description：
- MOSFET N-CH 1000V 4A TO220SM
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta)
- Rds On (Max) @ Id, Vgs
- 3.8 Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 1mA
- Gate Charge (Qg) @ Vgs
- 60nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 700pF @ 25V
- Power - Max
- 100W
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- TO-220SM
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