TPS1101DG4
- Description：
- MOSFET P-CH 15V 2.3A 8-SOIC
- Manufacturer：
- Texas Instruments
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 15V
- Current - Continuous Drain (Id) @ 25°C
- 2.3A (Ta)
- Rds On (Max) @ Id, Vgs
- 90 mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 11.25nC @ 10V
- Input Capacitance (Ciss) @ Vds
- -
- Power - Max
- 791mW
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SOIC
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