IPD053N06N
- Description：
- MOSFET N-CH 60V 18A TO252-3
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- OptiMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 18A (Ta), 45A (Tc)
- Rds On (Max) @ Id, Vgs
- 5.3 mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id
- 2.8V @ 36µA
- Gate Charge (Qg) @ Vgs
- 27nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 2000pF @ 30V
- Power - Max
- 3W
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- TO-252-3
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