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IPD053N06N

Description:
MOSFET N-CH 60V 18A TO252-3
Manufacturer:
Infineon Technologies
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IPD053N06N

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs
5.3 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
2.8V @ 36µA
Gate Charge (Qg) @ Vgs
27nC @ 10V
Input Capacitance (Ciss) @ Vds
2000pF @ 30V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252-3

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