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SI5855DC-T1-E3

Description:
MOSFET P-CH 20V 2.7A 1206-8
Manufacturer:
Vishay Siliconix
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SI5855DC-T1-E3

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Diode (Isolated)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta)
Rds On (Max) @ Id, Vgs
110 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) @ Vgs
7.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™

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