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IXTQ200N10T

Description:
MOSFET N-CH 100V 200A TO-3P
Manufacturer:
IXYS
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IXTQ200N10T

Product Information

Category
FETs - Single
Packaging
Tube
Series
TrenchMV™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
Rds On (Max) @ Id, Vgs
5.5 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) @ Vgs
152nC @ 10V
Input Capacitance (Ciss) @ Vds
9400pF @ 25V
Power - Max
550W
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P

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