IRFBG30PBF
- Description：
- MOSFET N-CH 1000V 3.1A TO-220AB
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C
- 3.1A (Tc)
- Rds On (Max) @ Id, Vgs
- 5 Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) @ Vgs
- 80nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 980pF @ 25V
- Power - Max
- 125W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220AB
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