2SJ610(TE16L1,NQ)
- Description：
- MOSFET P-CH 250V 2A PW-MOLD
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- -
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 250V
- Current - Continuous Drain (Id) @ 25°C
- 2A (Ta)
- Rds On (Max) @ Id, Vgs
- 2.55 Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 1mA
- Gate Charge (Qg) @ Vgs
- 24nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 381pF @ 10V
- Power - Max
- 20W
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- PW-MOLD
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