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IPB65R099C6ATMA1

Description:
MOSFET N-CH 650V 38A TO263
Manufacturer:
Infineon Technologies
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IPB65R099C6ATMA1

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
CoolMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Rds On (Max) @ Id, Vgs
99 mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA
Gate Charge (Qg) @ Vgs
127nC @ 10V
Input Capacitance (Ciss) @ Vds
2780pF @ 100V
Power - Max
-
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263

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