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BSB056N10NN3 G

Description:
MOSFET N-CH 100V 9A WDSON-2
Manufacturer:
Infineon Technologies
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BSB056N10NN3 G

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs
5.6 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3.5V @ 100µA
Gate Charge (Qg) @ Vgs
74nC @ 10V
Input Capacitance (Ciss) @ Vds
5500pF @ 50V
Power - Max
78W
Mounting Type
Surface Mount
Package / Case
3-WDSON
Supplier Device Package
MG-WDSON-2, CanPAK M™

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