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RW1C020UNT2R

Description:
MOSFET N-CH 20V 2A WEMT6
Manufacturer:
Rohm Semiconductor
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RW1C020UNT2R

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2A
Rds On (Max) @ Id, Vgs
105 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) @ Vgs
2nC @ 4.5V
Input Capacitance (Ciss) @ Vds
180pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
6-WEMT

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