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SIE860DF-T1-GE3

Description:
MOSFET N-CH D-S 30V POLARPAK
Manufacturer:
Vishay Siliconix
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SIE860DF-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Rds On (Max) @ Id, Vgs
2.1 mOhm @ 21.7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
105nC @ 10V
Input Capacitance (Ciss) @ Vds
4500pF @ 15V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
10-PolarPAK® (M)
Supplier Device Package
10-PolarPAK® (M)

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