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EPC8010ENGR

Description:
TRANS GAN 100V 3.4A BUMPED DIE
Manufacturer:
EPC
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EPC8010ENGR

Product Information

Category
FETs - Single
Packaging
*
Series
eGaN®
FET Type
GaNFET N-Channel, Gallium Nitride
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)
Rds On (Max) @ Id, Vgs
160 mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
0.354nC @ 50V
Input Capacitance (Ciss) @ Vds
47pF @ 50V
Power - Max
-
Mounting Type
*
Package / Case
-
Supplier Device Package
*

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