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EPC8009ENGR

Description:
TRAN GAN 65V 4.1A BUMPED DIE
Manufacturer:
EPC
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EPC8009ENGR

Product Information

Category
FETs - Single
Packaging
Tray
Series
eGaN®
FET Type
GaNFET N-Channel, Gallium Nitride
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
65V
Current - Continuous Drain (Id) @ 25°C
4.1A (Ta)
Rds On (Max) @ Id, Vgs
138 mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
0.380nC @ 32.5V
Input Capacitance (Ciss) @ Vds
47pF @ 32.5V
Power - Max
-
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die

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