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PML260SN,118

Description:
MOSFET N-CH 200V 8.8A 8HVSON
Manufacturer:
NXP Semiconductors
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PML260SN,118

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
8.8A
Rds On (Max) @ Id, Vgs
294 mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
13.3nC @ 10V
Input Capacitance (Ciss) @ Vds
657pF @ 30V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Supplier Device Package
8-DFN3333 (3.3x3.3)

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