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SI2369DS-T1-GE3

Description:
MOSFET P-CHAN 30V TO-236
Manufacturer:
Vishay Siliconix
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SI2369DS-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Rds On (Max) @ Id, Vgs
29 mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
36nC @ 10V
Input Capacitance (Ciss) @ Vds
1295pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236

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