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BSB028N06NN3 G

Description:
MOSFET N-CH 60V 22A WDSON-2
Manufacturer:
Infineon Technologies
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BSB028N06NN3 G

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs
2.8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 102µA
Gate Charge (Qg) @ Vgs
143nC @ 10V
Input Capacitance (Ciss) @ Vds
12000pF @ 30V
Power - Max
78W
Mounting Type
Surface Mount
Package / Case
3-WDSON
Supplier Device Package
MG-WDSON-2, CanPAK M™

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