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SI7119DN-T1-E3

Description:
MOSFET P-CH 200V 3.8A 1212-8
Manufacturer:
Vishay Siliconix
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SI7119DN-T1-E3

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
3.8A (Tc)
Rds On (Max) @ Id, Vgs
1.05 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
25nC @ 10V
Input Capacitance (Ciss) @ Vds
666pF @ 50V
Power - Max
52W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Supplier Device Package
PowerPAK® 1212-8

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