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2N7635-GA

Description:
TRANS SJT 650V 4A TO-257
Manufacturer:
GeneSiC Semiconductor
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2N7635-GA

Product Information

Category
FETs - Single
Packaging
Bulk
Series
-
FET Type
Silicon Carbide, Normally Off
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
4A (Tc) (165°C)
Rds On (Max) @ Id, Vgs
415 mOhm @ 4A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) @ Vgs
-
Input Capacitance (Ciss) @ Vds
324pF @ 35V
Power - Max
7W
Mounting Type
Through Hole
Package / Case
TO-257-3
Supplier Device Package
TO-257

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