IRF6665TR1PBF
- Description：
- MOSFET N-CH 100V 4.2A DIRECTFET
- Manufacturer：
- International Rectifier
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- HEXFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 4.2A (Ta), 19A (Tc)
- Rds On (Max) @ Id, Vgs
- 62 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 13nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 530pF @ 25V
- Power - Max
- 2.2W
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET™ Isometric SH
- Supplier Device Package
- DIRECTFET™ SH
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