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SIS435DNT-T1-GE3

Description:
MOSFET P-CH 20V 22A 1212-8
Manufacturer:
Vishay Siliconix
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SIS435DNT-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs
5.4 mOhm @ 13A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) @ Vgs
180nC @ 8V
Input Capacitance (Ciss) @ Vds
5700pF @ 10V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
PowerPAK 1212-8
Supplier Device Package
PowerPAK® 1212-8

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