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IPD50R650CE

Description:
MOSFET N CH 500V 6.1A PG-TO252
Manufacturer:
Infineon Technologies
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IPD50R650CE

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
CoolMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
6.1A (Tc)
Rds On (Max) @ Id, Vgs
650 mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id
3.5V @ 150µA
Gate Charge (Qg) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) @ Vds
342pF @ 100V
Power - Max
47W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3

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