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SIRA18DP-T1-GE3

Description:
MOSFET N-CHAN 30V D-S SO-8
Manufacturer:
Vishay Siliconix
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SIRA18DP-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
15.5A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs
7.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) @ Vgs
21.5nC @ 10V
Input Capacitance (Ciss) @ Vds
1000pF @ 15V
Power - Max
14.7W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8

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