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SIHB30N60E-GE3

Description:
MOSFET N-CH 600V 29A D2PAK
Manufacturer:
Vishay Siliconix
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SIHB30N60E-GE3

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
29A (Ta)
Rds On (Max) @ Id, Vgs
125 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
130nC @ 10V
Input Capacitance (Ciss) @ Vds
2600pF @ 100V
Power - Max
250W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D²PAK

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