IPW65R190E6
- Description：
- MOSFET N-CH 650V 20.2A TO247
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- CoolMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 20.2A (Tc)
- Rds On (Max) @ Id, Vgs
- 190 mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 730µA
- Gate Charge (Qg) @ Vgs
- 73nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 1620pF @ 100V
- Power - Max
- 151W
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Supplier Device Package
- PG-TO247-3
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