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BUK9Y22-30B,115

Description:
MOSFET N-CH 30V 37.7A LFPAK
Manufacturer:
NXP Semiconductors
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BUK9Y22-30B,115

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
37.7A (Tc)
Rds On (Max) @ Id, Vgs
19 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) @ Vgs
10.5nC @ 5V
Input Capacitance (Ciss) @ Vds
940pF @ 25V
Power - Max
59.4W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669, 4-LFPAK
Supplier Device Package
LFPAK56, Power-SO8

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