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SIHU7N60E-GE3

Description:
MOSFET N CH 600V 7A TO-251
Manufacturer:
Vishay Siliconix
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SIHU7N60E-GE3

Product Information

Category
FETs - Single
Packaging
Bulk
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Rds On (Max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
40nC @ 10V
Input Capacitance (Ciss) @ Vds
680pF @ 100V
Power - Max
78W
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-Pak

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