PMPB12UN,115
- Description：
- MOSFET N-CH 20V 11.3A 6DFN
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 7.9A (Ta)
- Rds On (Max) @ Id, Vgs
- 18 mOhm @ 7.9A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) @ Vgs
- 13nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 886pF @ 10V
- Power - Max
- 1.7W
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Supplier Device Package
- 6-DFN2020MD (2x2)
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