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BSC082N10LS G

Description:
MOSFET N-CH 100V 100A TDSON-8
Manufacturer:
Infineon Technologies
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BSC082N10LS G

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
100A
Rds On (Max) @ Id, Vgs
8.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.4V @ 110µA
Gate Charge (Qg) @ Vgs
104nC @ 10V
Input Capacitance (Ciss) @ Vds
7400pF @ 50V
Power - Max
156W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8

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