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SI8810EDB-T2-E1

Description:
MOSFET N-CH 20V 2.1A MICROFOOT
Manufacturer:
Vishay Siliconix
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SI8810EDB-T2-E1

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.1A (Ta)
Rds On (Max) @ Id, Vgs
72 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) @ Vgs
8nC @ 8V
Input Capacitance (Ciss) @ Vds
245pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
4-XFBGA
Supplier Device Package
4-Microfoot

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