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TK31N60W,S1VF

Description:
MOSFET N CH 600V 30.8A TO247
Manufacturer:
Toshiba Semiconductor and Storage
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TK31N60W,S1VF

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
30.8A (Ta)
Rds On (Max) @ Id, Vgs
88 mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id
3.7V @ 1.5mA
Gate Charge (Qg) @ Vgs
86nC @ 10V
Input Capacitance (Ciss) @ Vds
3000pF @ 300V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3

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