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IPI041N12N3 G

Description:
MOSFET N-CH 120V 120A TO262-3
Manufacturer:
Infineon Technologies
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IPI041N12N3 G

Product Information

Category
FETs - Single
Packaging
Tube
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
4.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Gate Charge (Qg) @ Vgs
211nC @ 10V
Input Capacitance (Ciss) @ Vds
13800pF @ 60V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
PG-TO262-3

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