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EPC2010

Description:
TRANS GAN 200V 12A BUMPED DIE
Manufacturer:
EPC
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EPC2010

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
eGaN®
FET Type
GaNFET N-Channel, Gallium Nitride
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Rds On (Max) @ Id, Vgs
25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id
2.5V @ 3mA
Gate Charge (Qg) @ Vgs
5nC @ 5V
Input Capacitance (Ciss) @ Vds
480pF @ 100V
Power - Max
-
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die

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