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EPC2012

Description:
TRANS GAN 200V 3A BUMPED DIE
Manufacturer:
EPC
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EPC2012

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
eGaN®
FET Type
GaNFET N-Channel, Gallium Nitride
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Rds On (Max) @ Id, Vgs
100 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) @ Vgs
1.5nC @ 100V
Input Capacitance (Ciss) @ Vds
128pF @ 100V
Power - Max
-
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die

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