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BSC109N10NS3 G

Description:
MOSFET N-CH 100V 63A 8TDSON
Manufacturer:
Infineon Technologies
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BSC109N10NS3 G

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
63A (Tc)
Rds On (Max) @ Id, Vgs
10.9 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id
3.5V @ 45µA
Gate Charge (Qg) @ Vgs
35nC @ 10V
Input Capacitance (Ciss) @ Vds
2500pF @ 50V
Power - Max
78W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8

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