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SI3460DV-T1-E3

Description:
MOSFET N-CH 20V 5.1A 6TSOP
Manufacturer:
Vishay Siliconix
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SI3460DV-T1-E3

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
5.1A (Ta)
Rds On (Max) @ Id, Vgs
27 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 1mA (Min)
Gate Charge (Qg) @ Vgs
20nC @ 4.5V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.065", 1.65mm Width)
Supplier Device Package
6-TSOP

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