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IPD180N10N3 G

Description:
MOSFET N-CH 100V 43A TO252-3
Manufacturer:
Infineon Technologies
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IPD180N10N3 G

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
43A
Rds On (Max) @ Id, Vgs
18 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33µA
Gate Charge (Qg) @ Vgs
25nC @ 10V
Input Capacitance (Ciss) @ Vds
1800pF @ 50V
Power - Max
71W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3

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