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BSC196N10NS G

Description:
MOSFET N-CH 100V 45A TDSON-8
Manufacturer:
Infineon Technologies
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BSC196N10NS G

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
45A
Rds On (Max) @ Id, Vgs
19.6 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
4V @ 42µA
Gate Charge (Qg) @ Vgs
34nC @ 10V
Input Capacitance (Ciss) @ Vds
2300pF @ 50V
Power - Max
78W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8

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