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SI7110DN-T1-E3

Description:
MOSFET N-CH 20V 13.5A 1212-8
Manufacturer:
Vishay Siliconix
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SI7110DN-T1-E3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
13.5A (Ta)
Rds On (Max) @ Id, Vgs
5.3 mOhm @ 21.1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
21nC @ 4.5V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Supplier Device Package
PowerPAK® 1212-8

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