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TK10V60W,LVQ

Description:
MOSFET N-CH 600V 9.7A 5DFN
Manufacturer:
Toshiba Semiconductor and Storage
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TK10V60W,LVQ

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
9.7A (Ta)
Rds On (Max) @ Id, Vgs
380 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 500µA
Gate Charge (Qg) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) @ Vds
700pF @ 300V
Power - Max
88.3W
Mounting Type
Surface Mount
Package / Case
4-VSFN Exposed Pad
Supplier Device Package
5-DFN (8x8)

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