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BSC22DN20NS3 G

Description:
MOSFET N-CH 200V 7A 8TDSON
Manufacturer:
Infineon Technologies
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BSC22DN20NS3 G

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Rds On (Max) @ Id, Vgs
225 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 13µA
Gate Charge (Qg) @ Vgs
5.6nC @ 10V
Input Capacitance (Ciss) @ Vds
430pF @ 100V
Power - Max
34W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8

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