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FDD10N20LZTM

Description:
MOSFET N-CH 200V 7.6A DPAK-3
Manufacturer:
Fairchild Semiconductor
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FDD10N20LZTM

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
UniFET™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Rds On (Max) @ Id, Vgs
360 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
16nC @ 10V
Input Capacitance (Ciss) @ Vds
585pF @ 25V
Power - Max
56W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252, (D-Pak)

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