APTM100U13SG
- Description：
- MOSFET N-CH 1000V 65A J3
- Manufacturer：
- Microsemi Power Products Group
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Product Information
- Category
- FETs - Modules
- Packaging
- Bulk
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C
- 65A
- Rds On (Max) @ Id, Vgs
- 145 mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 10mA
- Gate Charge (Qg) @ Vgs
- 2000nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 31600pF @ 25V
- Power - Max
- 1250W
- Mounting Type
- Chassis Mount
- Package / Case
- J3 Module
- Supplier Device Package
- Module
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