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SI4666DY-T1-GE3

Description:
MOSFET N-CH 25V 8-SOIC
Manufacturer:
Vishay Siliconix
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SI4666DY-T1-GE3

Product Information

Category
FETs - Single
Packaging
Digi-Reel®
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs
10 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) @ Vgs
34nC @ 10V
Input Capacitance (Ciss) @ Vds
1145pF @ 10V
Power - Max
5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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