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BSH108,215

Description:
MOSFET N-CH 30V 1.9A SOT23
Manufacturer:
NXP Semiconductors
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BSH108,215

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
1.9A (Ta)
Rds On (Max) @ Id, Vgs
120 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) @ Vgs
10nC @ 10V
Input Capacitance (Ciss) @ Vds
190pF @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3

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